COMPARISON OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS MODELING IN TWO AND THREE DIMENSIONS by
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چکیده
منابع مشابه
Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization
We propose and demonstrate a two dimensional/three dimensional hybrid channel AlGaN/GaN high electron mobility transistor (HEMT) structure with a flat transconductance profile using polarization-induced channel engineering. A quasi three dimensional electron gas profile with 5–6 nm of vertical channel depth was formed by grading the channel region linearly from GaN to Al0.15Ga0.85 N over 50 Å. ...
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